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CYPRESS
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Nonvolatile Memory
來源: 發(fā)布時(shí)間:2016-09-19 點(diǎn)擊量: 1972

F-RAM products combine the nonvolatile data storage capability of ROM with the benefits of RAM, which include a high number of read and write cycles, high speed read and write cycles, and low power consumption. Our F-RAM product line features various interfaces and densities, which include industry-standard serial and parallel interfaces; industry standard package types; and 4-kilobit, 16-kilobit, 64-kilobit, 256-kilobit, 1-megabit, 2-megabit, and 4-megabit densities.

All Ramtron F-RAM products have three distinct properties that make it superior to other nonvolatile memory technologies:


Fast write speed

F-RAM performs read and write operations at the same speed. Because F-RAM writes data at bus speed, there are no delays before the written data becomes nonvolatile. Floating gate memories have long write delays of 5 milliseconds. F-RAM writes in nanoseconds, essential in applications like auto safety systems.


High endurance

F-RAM offers virtually unlimited write endurance, which means it doesn’t wear out like other nonvolatile memory devices. Floating gate devices experience a hard failure and stop writing in as little as 1E5 cycles, making them unsuitable for high-endurance applications.


Low power consumption

F-RAM operates without a charge pump, enabling low power consumption. Floating gate devices demand high voltage during write operations. F-RAM writes at the native voltage of the manufacturing process: 5V, 3V, or even less on more advanced processes.


For more detailed product information and complete specifications, please see our latest nonvolatile memory products:

Serial F-RAM Memories

Parallel F-RAM Memories

Processor Companion (Featuring F-RAM Memory)